silicon carbide substrate
silicon carbide substrate
silicon carbide substrate
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規格番号:THG000-1
製品ディテール
Silicon Carbide (SiC) substrates are high-performance ceramic materials renowned for exceptional thermal conductivity, superior electrical insulation, and extreme environmental resilience. As a advanced functional carrier, they outperform traditional ceramic and metal substrates in demanding scenarios.
Available in single-crystal (4H-SiC, 6H-SiC) and sintered grades, SiC substrates boast thermal conductivity ranging from 120-400 W/(m·K), withstand temperatures up to 1200°C+, and exhibit strong corrosion resistance. These traits make them ideal for high-power, high-temperature, and high-voltage applications.
Key applications span power electronics (EV inverters, renewable energy converters), semiconductor devices (SiC MOSFETs/IGBTs), aerospace components, and industrial heating equipment. They can be customized via precision cutting, drilling, polishing, or metallization to meet specific project requirements, enabling more efficient and compact system designs.

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